Visible electroluminescence from native SiO2 on n-type Si substrates
- 29 July 1999
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 86 (4) , 2358-2360
- https://doi.org/10.1063/1.371056
Abstract
Visible electroluminescence (EL) has been observed from Ag (film or paste)/native -type Si structures. The diodes show good rectification behavior and the EL occurs only under reverse bias conditions when the top Ag electrode is negative. For p-type samples, a forward bias is required. The intensity of the EL is proportional to the diode current and its spectrum peaks at 620–640 nm. A model based on oxygen-related luminescent centers in the native oxide is proposed.
This publication has 20 references indexed in Scilit:
- Enhancement of the quantum efficiency and stability of electroluminescence from porous silicon by anodic passivationApplied Physics Letters, 1998
- Electroluminescence and nature of lightly spark-processed siliconSemiconductor Science and Technology, 1998
- Electroluminescence of silicon nanocrystallites prepared by pulsed laser ablation in reduced pressure inert gasJournal of Applied Physics, 1998
- Relation between electroluminescence and photoluminescence of Si+-implanted SiO2Journal of Applied Physics, 1997
- The structural and luminescence properties of porous siliconJournal of Applied Physics, 1997
- Silicon-based visible light-emitting devices integrated into microelectronic circuitsNature, 1996
- Effects of contact metals on electroluminescence from embedded nanosize-Si-particle filmsPhysical Review B, 1996
- Visible electroluminescence from nanocrystallites of silicon films prepared by plasma enhanced chemical vapor depositionApplied Physics Letters, 1996
- Stable electroluminescence from reverse biased n-type porous silicon–aluminum Schottky junction deviceApplied Physics Letters, 1996
- High quantum efficiency for a porous silicon light emitting diode under pulsed operationApplied Physics Letters, 1995