Effects of the Anderson localization on magnetoconductivity in metallic n-InSb and n-GaAs
- 28 February 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (1-2) , 113-119
- https://doi.org/10.1016/0038-1101(85)90218-7
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Temperature Dependence of the Inelastic Scattering Time in Metallic n-GaAsJournal of the Physics Society Japan, 1984
- Determination of Physical Parameters of the Anderson Localization in Metallic n-InSbJournal of the Physics Society Japan, 1984
- Effects of the Anderson Localization on Magnetoconductivity in Metallic n-GaAsJournal of the Physics Society Japan, 1984
- Low temperature conductivity of doped semiconductors: Mass anisotropy and intervalley effectsSolid State Communications, 1983
- Magnetoresistance ofn-InSb in Weakly Localized RegimeJournal of the Physics Society Japan, 1982
- Magnetoresistance of weakly disordered electronsPhysical Review B, 1982
- Temperature and magnetic field dependences of resistivity in metallicInSb below 100 mKPhysical Review B, 1982
- Theory of Negative Magnetoresistance I. Application to Heavily Doped SemiconductorsJournal of the Physics Society Japan, 1980
- Anomalous Three-LO-Phonon Assisted Cyclotron Resonance with Spin-Flip Transitions in n-InSbJournal of the Physics Society Japan, 1980
- Theory of negative magnetoresistance in three-dimensional systemsSolid State Communications, 1980