A preliminary study of dislocations in indium and gallium phosphides
- 1 September 1973
- journal article
- Published by Springer Nature in Journal of Materials Science
- Vol. 8 (9) , 1349-1354
- https://doi.org/10.1007/bf00549351
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The preparation of high purity epitaxial InPSolid State Communications, 1970
- Liquid encapsulation crystal pulling at high pressuresJournal of Crystal Growth, 1968
- The Defect Structure of GaP Crystals Grown from Gallium Solutions, Vapor Phase and Liquid Phase Epitaxial DepositionJournal of the Electrochemical Society, 1968
- Dislocations and Precipitates in GaAs Injection LasersJournal of Applied Physics, 1966