Temperature Ramping for Nucleation of Oxygen Precipitates in Silicon
- 1 January 1984
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- A Defect Control Technique for the Intrinsic Gettering in Silicon Device ProcessingJapanese Journal of Applied Physics, 1984
- Some Observations on Oxygen Precipitation/Gettering in Device Processed Czochralski SiliconJournal of the Electrochemical Society, 1983
- The Effect of Carbon on the Precipitation of Oxygen in Czochralski SiliconMRS Proceedings, 1980
- Oxygen precipitation and the generation of dislocations in siliconPhilosophical Magazine, 1976