The Effect of Carbon on the Precipitation of Oxygen in Czochralski Silicon
- 1 January 1980
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Effects of ambients on oxygen precipitation in siliconApplied Physics Letters, 1980
- Homogeneous nucleation of oxide precipitates in Czochralski-grown siliconApplied Physics Letters, 1980
- Lifetime improvement in Czochralski-grown silicon wafers by the use of a two-step annealingApplied Physics Letters, 1980
- Carbon and oxygen role for thermally induced microdefect formation in silicon crystalsApplied Physics Letters, 1979
- Structural defects in annealed silicon containing oxygenJournal of Applied Physics, 1978
- Precipitation of oxygen in siliconApplied Physics Letters, 1977
- Oxygen Content of Silicon Single CrystalsJournal of Applied Physics, 1957