Size-dependent phase transition memory switching behavior and low writing currents in GeTe nanowires
- 27 November 2006
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (22) , 223116
- https://doi.org/10.1063/1.2397558
Abstract
Synthesis and device characteristics of highly scalable GeTe nanowire-based phase transition memory are reported. The authors have demonstrated reversible phase transition memory switching behavior in GeTe nanowires, and obtained critical device parameters, such as write and erase currents, threshold voltage, and programming curves. The diameter dependence of memory switching behavior in GeTe nanowires was studied and a systematic reduction of writing currents with decreasing diameter was observed, with currents as low as 0.42mA for a 28nm nanowire. Results show that nanowires are very promising for scalable memory applications and for studying size-dependent phase transition mechanisms at the nanoscale.Keywords
This publication has 9 references indexed in Scilit:
- Synthesis and Characterization of Phase-Change NanowiresNano Letters, 2006
- Germanium Telluride Nanowires and Nanohelices with Memory-Switching BehaviorJournal of the American Chemical Society, 2006
- Low-cost and nanoscale non-volatile memory concept for future silicon chipsNature Materials, 2005
- Local structure of crystallized GeTe filmsApplied Physics Letters, 2003
- Structure of laser-crystallized Ge2Sb2+xTe5 sputtered thin films for use in optical memoryJournal of Applied Physics, 2000
- Diameter-Selective Synthesis of Semiconductor NanowiresJournal of the American Chemical Society, 2000
- Compound materials for reversible, phase-change optical data storageApplied Physics Letters, 1986
- Reversible Electrical Switching Phenomena in Disordered StructuresPhysical Review Letters, 1968
- VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTHApplied Physics Letters, 1964