Energy dependence of the Nernst-Ettingshausen effect induced by pulsed laser light in bismuth films

The behavior with the irradiation energy and with the magnetic field of the thermomagnetic response induced by laser pulses in 5.5-μm Bi films at room temperature is reported in this paper. The Nernst-Ettingshausen coefficient at an applied magnetic field of 1 T is estimated: ${\mathit{Q}}_{\mathrm{NE}}$≃1.0×${10}^{\mathrm{-}5}$ V/T K. A good agreement is found when these results are compared with those reported earlier in polycrystalline bulk samples obtained by a conventional method. This supports the reliability of the pulsed laser technique in the measurement of weak transport effects and indicates that the optically pumped carriers hardly influence the transport properties of bismuth.