Theory of laser gain in InGaN quantum dots
- 30 September 2002
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (14) , 2566-2568
- https://doi.org/10.1063/1.1509476
Abstract
A theory for gain is developed for wide-bandgap nitride-based quantum-dot laser structures. A semiclassical laser theory is used to describe the optical susceptibility in the presence of strong many-body Coulomb interaction and quantum-confined Stark effect. Application of this theory shows distinctly different gain behavior depending on quantum dot dimensions, because of the interplay of these effects.Keywords
This publication has 10 references indexed in Scilit:
- Anomalous Quantum-Confined Stark Effects in StackedSelf-Assembled Quantum DotsPhysical Review Letters, 2002
- Many-body effects in the gain spectra of highly excited quantum-dot lasersPhysical Review B, 2001
- Theory of the electronic structure of GaN/AlN hexagonal quantum dotsPhysical Review B, 2000
- Microscopic theory of optical nonlinearities and spontaneous emission lifetime in group-III nitride quantum wellsPhysical Review B, 1999
- Growth kinetics and optical properties of self-organized GaN quantum dotsJournal of Applied Physics, 1998
- Self-assembling GaN quantum dots on AlxGa1−xN surfaces using a surfactantApplied Physics Letters, 1996
- Envelope-function formalism for valence bands in wurtzite quantum wellsPhysical Review B, 1996
- First-principles calculations of effective-mass parameters of AlN and GaNPhysical Review B, 1995
- Theory of laser gain in group-III nitridesApplied Physics Letters, 1995
- The influence of the strain-induced electric field on the charge distribution in GaN-AlN-GaN structureJournal of Applied Physics, 1993