Envelope-function formalism for valence bands in wurtzite quantum wells
- 15 January 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 53 (4) , 1997-2009
- https://doi.org/10.1103/physrevb.53.1997
Abstract
A theoretical treatment of the valence-band spectrum of wurtzite-type materials is developed starting from the Rashba-Sheka-Pikus (RSP) 6×6 matrix Hamiltonian for coupled , , and levels. A unitary transformation is applied in order to diagonalize the RSP Hamiltonian to two 3×3 blocks and the results are compared with those obtained for cubic structures [C. Y.-P. Chao and S. L. Chuang, Phys. Rev. B 46, 4110 (1992)]. Using the diagonalized form of the Hamiltonian, a solution for hole states in wurtzite quantum wells (QW’s) is constructed and explicit expressions for the QW valence subband edges are obtained. We suggest that parameters of the RSP Hamiltonian for würtzite structures can be deduced from experimental observations of the energy separation between edges of the hole subbands in QW’s. © 1996 The American Physical Society.
Keywords
This publication has 46 references indexed in Scilit:
- Optical properties and temperature dependence of the interband transitions of cubic and hexagonal GaNPhysical Review B, 1994
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994
- Progress and prospects for GaN and the III–V nitride semiconductorsThin Solid Films, 1993
- High-power InGaN/GaN double-heterostructure violet light emitting diodesApplied Physics Letters, 1993
- Conductivity control of GaN and fabrication of UV/blue GaN light emitting devicesPhysica B: Condensed Matter, 1993
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayersApplied Physics Letters, 1992
- High-Power GaN P-N Junction Blue-Light-Emitting DiodesJapanese Journal of Applied Physics, 1991
- III-V nitrides for electronic and optoelectronic applicationsProceedings of the IEEE, 1991
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989