Characterization of the silicon-on-insulator material formed by high-dose oxygen implantation using spectroscopic ellipsometry
- 15 October 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (8) , 3458-3461
- https://doi.org/10.1063/1.339317
Abstract
Nondestructive characterization of high-dose oxygen implanted and 1350 °C annealed silicon-on-insulator structures has been performed by spectroscopic ellipsometry. This method provides a fully in-depth profiling (thickness and nature) of the structure including interfaces. Results have been confirmed by other techniques such as cross-sectional transmission electron microscopy and high-resolution Rutherford backscattering spectroscopy.This publication has 18 references indexed in Scilit:
- Thickness determination for silicon-on-insulator structuresElectronics Letters, 1986
- Nondestructive depth profiling by spectroscopic ellipsometryApplied Physics Letters, 1985
- Optical characterization of polycrystalline silicon before and after thermal oxidationThin Solid Films, 1985
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eVPhysical Review B, 1983
- Optical properties of thin filmsThin Solid Films, 1982
- Errors in “Effects of component optical activity in data reduction and calibration of rotating-analyzer ellipsometers”Journal of the Optical Society of America, 1981
- Dielectric and optical properties of SiOxPhysica Status Solidi (a), 1980
- Investigation of effective-medium models of microscopic surface roughness by spectroscopic ellipsometryPhysical Review B, 1979
- Index Matching Reduces Peak Electric Fields in Thin-Film PolarizersApplied Optics, 1975
- Optimizing precision of rotating-analyzer ellipsometersJournal of the Optical Society of America, 1974