Cyclotron resonance of high-mobility GaAs/AlGaAs (311) 2DHGs
Open Access
- 1 July 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (7) , 1465-1469
- https://doi.org/10.1088/0268-1242/8/7/043
Abstract
Cyclotron resonance of high-mobility (up to 300000 cm2 V-1 s-1 at 100 mK) GaAs/AlGaAs two-dimensional hole gases (2DHGs) grown on (311)A oriented substrates has been measured in magnetic fields up to 17 T and at temperatures down to 350 mK. The 2D hole density is in the range (1.0-2.0)*1011 cm-2. Two resonances are in general observed; at low magnetic fields the lower-field resonance dominates but a progressive transfer of oscillator strength takes place as the field increases. A self-consistent calculation of the Landau fan diagram for the higher-symmetry (100) direction is used to interpret the data and identify the observed transitions.Keywords
This publication has 20 references indexed in Scilit:
- Observation of the transition to an insulating state consistent with a Wigner solid in a high-density 2D hole gasPhysica B: Condensed Matter, 1993
- Orientation dependence of subband structure and optical properties in GaAsAlGaAs quantum wells: [001], [111], [110] and [310] growth directionsSuperlattices and Microstructures, 1992
- Valence subband structure of [100]-, [110]-, and [111]-grown GaAs-(Al,Ga)As quantum wells and the accuracy of the axial approximationPhysical Review B, 1992
- Strong anisotropy of hole subbands in (311) GaAs-AlAs quantum wellsPhysical Review B, 1992
- Growth of p- and n-type GaAs/(AlGa)As double barrier resonant tunneling devices on (311)A and (111)B substrate orientationsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Observation of a reentrant insulating phase near the 1/3 fractional quantum Hall liquid in a two-dimensional hole systemPhysical Review Letters, 1992
- The growth and physics of high mobility two-dimensional hole gasesJournal of Crystal Growth, 1991
- Probing the hole dispersion curves of a quantum well using resonant magnetotunneling spectroscopyPhysical Review Letters, 1991
- High mobility two-dimensional hole gas in an Al0.26Ga0.74As/GaAs heterojunctionJournal of Applied Physics, 1986
- Energy Structure and Quantized Hall Effect of Two-Dimensional HolesPhysical Review Letters, 1983