High mobility two-dimensional hole gas in an Al0.26Ga0.74As/GaAs heterojunction
- 1 September 1986
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (5) , 1834-1835
- https://doi.org/10.1063/1.337227
Abstract
We have obtained two‐dimensional hole gas with low temperature mobility as high as 3.8×105 cm2 V−1 s−1 at a density of 1×1011 cm−2. The sample was grown on (311)A orientation. We give arguments to show that (100) orientation is not the optimum orientation for the growth of high purity materials.This publication has 21 references indexed in Scilit:
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