Hole mobility in modulation-doped heterostructures: GaAs-AlGaAs

A model for the hole mobility in a two-dimensional hole gas confined at a modulation-doped heterostructure interface is proposed. All the major scattering processes in the two uppermost spin subbands are taken into account. The calculations are substantially simplified by effects of a strong free hole screening. The model explains experimental results of the temperature dependence of the hole mobility. It is shown that at large spacer widths, the predicted mobility limit exceeds 2×${10}^5$ ${\mathrm{cm}}^2$/V s and is entirely determined by acoustic-phonon deformation-potential scattering.