Initial stages of praseodymium oxide film formation on Si()
- 1 April 2002
- journal article
- Published by Elsevier in Surface Science
- Vol. 504, 159-166
- https://doi.org/10.1016/s0039-6028(01)01961-6
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- High-k gate dielectrics with ultra-low leakage current based on praseodymium oxidePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Density-functional theory calculations for poly-atomic systems: electronic structure, static and elastic properties and ab initio molecular dynamicsComputer Physics Communications, 1997
- Efficient pseudopotentials for plane-wave calculationsPhysical Review B, 1991
- Scanning tunneling microscopy studies of structural disorder and steps on Si surfacesJournal of Vacuum Science & Technology A, 1989
- Efficacious Form for Model PseudopotentialsPhysical Review Letters, 1982
- Self-interaction correction to density-functional approximations for many-electron systemsPhysical Review B, 1981
- Ground State of the Electron Gas by a Stochastic MethodPhysical Review Letters, 1980