Electron Mobility in II-VI Semiconductors
- 15 November 1970
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 2 (10) , 4036-4044
- https://doi.org/10.1103/physrevb.2.4036
Abstract
The electron drift mobility in CdS, CdSe, CdTe, ZnS, ZnSe, and ZnTe is calculated by an iterative solution of the Boltzmann equation for lattice scattering. Piezoelectric, deformation-potential acoustic-mode, and polar-mode scattering are included. The acoustic deformation potential appropriate to acoustic-mode scattering appears to be much higher than previously expected.Keywords
This publication has 31 references indexed in Scilit:
- Infrared Dielectric Function of CdSJournal of Applied Physics, 1970
- Electrical properties of n-type CdSe single crystals prepared under a nitrogen pressureCzechoslovak Journal of Physics, 1968
- Electrical Conduction in-Type Cadmium Sulfide at Low TemperaturesPhysical Review B, 1968
- Electrical Properties of n‐Type CdSePhysica Status Solidi (b), 1967
- Piezoelectric Scattering in SemiconductorsPhysical Review B, 1964
- Transient Acoustoelectric Saturation Effects in ZnS and CdS CrystalsPhysical Review Letters, 1964
- Carrier Mobility and Shallow Impurity States in ZnSe and ZnTePhysical Review B, 1963
- Electrical Properties of-Type CdTePhysical Review B, 1963
- Some optical and electrical measurements on blue fluorescent ZnS-Cl single crystalsPhysica, 1956
- Allgemeine Theorie der Abweichungen von der Mathiessenschen RegelThe European Physical Journal A, 1949