A direct method to measure trap parameters in photoconductors
- 16 December 1973
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 20 (2) , 469-475
- https://doi.org/10.1002/pssa.2210200207
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- On the classification of traps and recombination centresPhysica Status Solidi (a), 1973
- Conductivity and stimulated emission in CdS under intense electron beam excitationPhysica Status Solidi (a), 1972
- Photocurrent saturation in CdS single crystals under electron beam excitationPhysica Status Solidi (b), 1971
- On the Dependence of Photocurrents on the Excitation Strength (II)Physica Status Solidi (a), 1971
- A Pulsed Electron Gun Suitable for Exciting Semiconductors to InversionReview of Scientific Instruments, 1970
- Field Quenching as Mechanism of Negative Differential Conductivity in Photoconducting CdSPhysica Status Solidi (b), 1970
- Superlinear PhotoconductivityPhysica Status Solidi (b), 1969
- On the Dependence of Photocurrents on the Excitation StrengthPhysica Status Solidi (b), 1969
- Photoconduction in CdS Crystals Generated by a Modulated Electron BeamPhysica Status Solidi (b), 1968
- Zur Photoleitung aktivierter Kadmiumsulfid-Schichten bei Anregung mit ElektronenThe European Physical Journal A, 1959