High C-doping of MOVPE grown thin AlxGa1−xAs layers for AlGaAs/GaAs interband tunneling devices
- 1 January 2000
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 29 (1) , 47-52
- https://doi.org/10.1007/s11664-000-0093-5
Abstract
No abstract availableKeywords
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