Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy
- 3 October 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (14) , 1317-1319
- https://doi.org/10.1063/1.100008
Abstract
The controlled incorporation of carbon has been demonstrated for the metalorganic vapor phase epitaxy of GaAs. Carbon levels between 1016 and 1019 cm−3 can be achieved under typical growth conditions by using Ga(CH3)3 and either As(CH3)3 or mixtures of As(CH3)3 and AsH3. The carbon incorporation into GaAs goes through a minimum with growth temperature at ∼650 °C when using Ga(CH3)3 and As(CH3)3. The controlled addition of AsH3 monotonically decreases the carbon incorporation. The high carbon levels (≳1–2×1019 cm−3), greater than the reported solid solubility, are thermally stable with a low diffusion coefficient. The GaAs:C layers exhibit a low deep level concentration, ∼1013 cm−3, with only a single midgap trap present.Keywords
This publication has 10 references indexed in Scilit:
- Improved detection of carbon in GaAs by secondary ion mass spectroscopy: The influence of hydrocarbons in metalorganic vapor phase epitaxyApplied Physics Letters, 1988
- Investigation of carbon incorporation in GaAs using13C-enriched trimethylarsenic and13Ch4Journal of Electronic Materials, 1988
- Reaction mechanisms in the organometallic vapor phase epitaxial growth of GaAsApplied Physics Letters, 1988
- In situ mass spectroscopy and thermogravimetric studies of GaAs MOCVD gas phase and surface reactionsJournal of Crystal Growth, 1987
- Properties of high-purity AlxGa1−xAs grown by the metalorganic vapor-phase-epitaxy technique using methyl precursorsJournal of Applied Physics, 1987
- Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAsApplied Physics Letters, 1987
- Homogeneous and heterogeneous thermal decomposition rates of trimethylgallium and arsine and their relevance to the growth of GaAs by MOCVDJournal of Crystal Growth, 1986
- Intentional ρ-type doping by carbon in metalorganic MBE of GaAsJournal of Electronic Materials, 1986
- OMCVD growth of GaAs and AlGaAs using a solid as sourceJournal of Electronic Materials, 1985
- Mechanism of carbon incorporation in MOCVD GaAsJournal of Crystal Growth, 1984