Soft-breakdown damage in MOSFET's due to high-density plasma etching exposure
- 1 August 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 17 (8) , 388-390
- https://doi.org/10.1109/55.511584
Abstract
Gate leakage current densities on the order of nA//spl mu/m/sup 2/ at operating voltage levels have been observed in MOSFET's that were processed in a high-density plasma (HDP) oxide etch tool, yet these transistors have performance parameters that are within 10% of controls. These high gate leakage currents seen in the HDP etched devices were not observed in controls. Direct observation shows that these HDP exposed devices have light emission at higher voltages in the region where the gate poly-Si crosses the birds beak. Light emission in this region is also not observed in controls.Keywords
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