Formation of Polysilicon Films by Catalytic Chemical Vapor Deposition (cat-CVD) Method

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Abstract
Silicon films are deposited by a new plasma-free and low-temperature deposition technique, the catalytic chemical vapor deposition (cat-CVD) method, in which deposition gases are decomposed by reactions with a heated catalyzer placed near substrates. It is found that polysilicon films of a grain size of around 0.1 µm can be easily obtained at substrate temperatures lower than 450°C by this cat-CVD method when gas pressure P g is below a certain critical value, although films are amorphous even for substrate temperatures higher than 450°C when P g is larger than such a critical gas pressure.