High-quality amorphous silicon germanium produced by catalytic chemical vapor deposition
- 14 September 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (11) , 804-805
- https://doi.org/10.1063/1.98871
Abstract
High‐quality amorphous silicon germanium (a‐SiGe:H) films are produced by a new ‘‘catalytic chemical vapor deposition (CTL CVD)’’ method. In the method, a SiH4, GeH4, and H2 gas mixture is decomposed without using any plasmas or photochemical excitation, but using only the thermal or the catalytic reaction with a heated tungsten catalyzer. Photoconductive properties of CTL CVD a‐SiGe:H are apparently not degraded as the Ge content increases. The photoconductivity and the photosensitivity for AM‐1 of 100 mW/cm2 are 10−5–10−4 (Ω cm)−1 and 104, respectively, even for the sample of optical band gap of 1.40–1.45 eV.Keywords
This publication has 4 references indexed in Scilit:
- Chemical Vapor Deposition of a-SiGe:H Films Utilizing a Microwave-Excited PlasmaJapanese Journal of Applied Physics, 1987
- Catalytic Chemical Vapor Deposition (CTC–CVD) Method Producing High Quality Hydrogenated Amorphous SiliconJapanese Journal of Applied Physics, 1986
- Guiding Principle in the Preparation of High-Photosensitive Hydrogenated Amorphous Si–Ge Alloys from Glow-Discharge PlasmaJapanese Journal of Applied Physics, 1986
- Preparation of photoconductive a-SiGe alloy by glow dischargeJournal of Non-Crystalline Solids, 1983