Photoluminescence of 4H-SiC: some remarks
- 29 July 1999
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 61-62, 234-238
- https://doi.org/10.1016/s0921-5107(98)00509-1
Abstract
No abstract availableKeywords
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- High quality 4H-SiC epitaxial layers grown by chemical vapor depositionApplied Physics Letters, 1995
- The optical properties of luminescence centres in siliconPhysics Reports, 1989
- Luminescence ofSiC, and Location of Conduction-Band Minima in SiC PolytypesPhysical Review B, 1965