Quantitative analysis of oxygen in thin epitaxial layers of GaAs by SIMS
- 1 March 1978
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 149 (1-3) , 543-546
- https://doi.org/10.1016/0029-554x(78)90923-0
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A model relating electrical properties and impurity concentrations in semi-insulating GaAsJournal of Applied Physics, 1977
- Suppression of defect formation in GaAs layers by removing oxygen in LPEApplied Physics Letters, 1976
- The preparation of high purity gallium arsenide by vapour phase epitaxial growthSolid-State Electronics, 1965