Molecular-dynamics simulations of bulk and surface damage production in low-energy Cu→Cu bombardment
- 1 June 1992
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (11) , 5410-5418
- https://doi.org/10.1063/1.350563
Abstract
Molecular‐dynamics simulations are employed to study in detail the effects of low‐energy (≤100 eV) bombardment of a Cu (001) surface by Cu atoms. By following the simulation up to 4 ps in real time, the end configuration of defects in the target can be observed. We present results on the vacancy and interstitial distribution in the target, the spontaneous defect recombination, the number of surface vacancies and adatoms produced, and the mixing of target atoms induced by the bombardment. Furthermore, the fate of the projectile atom−backscattering and implantation−and the sputtering behavior are investigated. The relevance of the results on the modelling of ion‐beam (assisted) deposition is discussed.This publication has 25 references indexed in Scilit:
- Subplantation model for film growth from hyperthermal speciesPhysical Review B, 1990
- Beyond Pair Potentials in Elemental Transition Metals and SemiconductorsPublished by Elsevier ,1990
- Partitioning of ion-induced surface and bulk displacementsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Low-energy ion beams, molecular beam epitaxy, and surface morphologyNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- The role of ion/surface interactions and photo-induced reactions during film growth from the vapor phaseNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Property modification and synthesis by low energy particle bombardment concurrent with film growthNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Ion-based methods for optical thin film depositionJournal of Materials Science, 1986
- Embedded-atom method: Derivation and application to impurities, surfaces, and other defects in metalsPhysical Review B, 1984
- Sputtering studies with the Monte Carlo Program TRIM.SPApplied Physics A, 1984
- Semiempirical, Quantum Mechanical Calculation of Hydrogen Embrittlement in MetalsPhysical Review Letters, 1983