Moderated degradation enhancement of lateral pnp transistors due to measurement bias

This publication has 9 references indexed in Scilit:

• The effects of emitter-tied field plates on lateral PNP ionizing radiation response
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Enhanced low-dose-rate sensitivity of a low-dropout voltage regulator
  IEEE Transactions on Nuclear Science, 1998
• Moderated degradation enhancement of lateral pnp transistors due to measurement bias
  IEEE Transactions on Nuclear Science, 1998
• Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures
  IEEE Transactions on Nuclear Science, 1997
• Enhanced damage in bipolar devices at low dose rates: effects at very low dose rates
  IEEE Transactions on Nuclear Science, 1996
• The determination of Si-SiO/sub 2/ interface trap density in irradiated four-terminal VDMOSFETs using charge pumping
  IEEE Transactions on Nuclear Science, 1996
• Modeling ionizing radiation induced gain degradation of the lateral PNP bipolar junction transistor
  IEEE Transactions on Nuclear Science, 1996
• Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments
  IEEE Transactions on Nuclear Science, 1988
• Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
  Proceedings of the IRE, 1957