Enhanced damage in bipolar devices at low dose rates: effects at very low dose rates
- 1 December 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 43 (6) , 3049-3059
- https://doi.org/10.1109/23.556904
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Total dose hardness assurance techniques for new generation COTS devicesIEEE Transactions on Nuclear Science, 1996
- Enhanced damage in linear bipolar integrated circuits at low dose rateIEEE Transactions on Nuclear Science, 1995
- Comparison of ionizing-radiation-induced gain degradation in lateral, substrate, and vertical PNP BJTsIEEE Transactions on Nuclear Science, 1995
- Hardness-assurance issues for lateral PNP bipolar junction transistorsIEEE Transactions on Nuclear Science, 1995
- Total dose effects on negative voltage regulatorIEEE Transactions on Nuclear Science, 1994
- Dependence of total dose response of bipolar linear microcircuits on applied dose rateIEEE Transactions on Nuclear Science, 1994
- Saturation of the dose-rate response of bipolar transistors below 10 rad(SiO/sub 2/)/s: implications for hardness assuranceIEEE Transactions on Nuclear Science, 1994
- Response of interface traps during high-temperature anneals (MOSFETs)IEEE Transactions on Nuclear Science, 1991
- Charge and Interface State Generation in Field OxidesIEEE Transactions on Nuclear Science, 1984
- Field- and Time-Dependent Radiation Effects at the SiO2/Si Interface of Hardened MOS CapacitorsIEEE Transactions on Nuclear Science, 1977