Dependence of total dose response of bipolar linear microcircuits on applied dose rate
- 1 December 1994
- journal article
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 41 (6) , 2544-2549
- https://doi.org/10.1109/23.340614
Abstract
The effect of dose rate on the total dose radiation hardness of three commercial bipolar linear microcircuits is investigated. Total dose tests of linear bipolar microcircuits show larger degradation at 0.167 rad/s than at 90 rad/s even after the high dose rate test is followed by a room temperature plus a 100/spl deg/C anneal. No systematic correlation could be found for degradation at low dose rate versus high dose rate and anneal. Comparison of the low dose rate with the high dose rate anneal data indicates that MIL-STD-883, Method 1019.4 is not a worst-case test method when applied to bipolar microcircuits for low dose rate space applications.Keywords
This publication has 4 references indexed in Scilit:
- Total dose effects on negative voltage regulatorIEEE Transactions on Nuclear Science, 1994
- Hardness-assurance and testing issues for bipolar/BiCMOS devicesIEEE Transactions on Nuclear Science, 1993
- Response of advanced bipolar processes to ionizing radiationIEEE Transactions on Nuclear Science, 1991
- Comparison of MOS capacitor and transistor postirradiation responseIEEE Transactions on Nuclear Science, 1989