Total dose effects on negative voltage regulator
- 1 December 1994
- journal article
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 41 (6) , 2420-2426
- https://doi.org/10.1109/23.340597
Abstract
Functional failure at low dose level (4 Krad(Si)) on voltage regulators (LM137) from different manufacturers are analysed. Dose rate effects on parts hardness are evaluated, showing that lowering the dose rate degrade more the IC's in the range 55 rad(Si)/s-0.8 rad(Si)/s. A failure mechanism is proposed, mainly based on circuit analysis, voltage contrast measurements, local irradiation and local electrical measurements with probe station. A SPICE simulation was performed, providing quantitative informations on the degradation. In the light of such a failure analysis and dose rate effects, practical implications on radiation assurance are discussed.Keywords
This publication has 3 references indexed in Scilit:
- Hardness-assurance and testing issues for bipolar/BiCMOS devicesIEEE Transactions on Nuclear Science, 1993
- Trends in the total-dose response of modern bipolar transistorsIEEE Transactions on Nuclear Science, 1992
- Models for Total Dose Degradation of Linear Integrated CircuitsIEEE Transactions on Nuclear Science, 1987