Models for Total Dose Degradation of Linear Integrated Circuits

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Abstract
Mechanisms for total dose degradation of linear circuits are discussed, including bulk effects, oxide charge buildup and recombination at the Si-SiO2 interface. The dependence of damage on bias, dose, particle type and energy is used in conjunction with two-dimensional modeling to identify the failure mechanism in a specific linear device type. The importance of surface recombination is demonstrated along with the absence of bias dependence. Bulk damage is shown to be important for high energy electron irradiation because of wide-base pnp transistors. This causes substantial differences in device failure between electron and cobalt-60 environments that need to be taken into account for test standards and data bases that include commercial bipolar integrated circuits. Valid test methodologies for linear devices must consider the energy and particle type present in the actual environment.