Comparison of ionizing-radiation-induced gain degradation in lateral, substrate, and vertical PNP BJTs

This publication has 17 references indexed in Scilit:

• XFCB: a high speed complementary bipolar process on bonded SOI
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• A double-polysilicon self-aligned npn bipolar process (ADRF) with optional NMOS transistors for RF and microwave applications
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Mechanisms of ionizing-radiation-induced degradation in modern bipolar devices
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Total dose effects on negative voltage regulator
  IEEE Transactions on Nuclear Science, 1994
• Total dose effects in conventional bipolar transistors and linear integrated circuits
  IEEE Transactions on Nuclear Science, 1994
• Dependence of total dose response of bipolar linear microcircuits on applied dose rate
  IEEE Transactions on Nuclear Science, 1994
• Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates
  IEEE Transactions on Nuclear Science, 1994
• Saturation of the dose-rate response of bipolar transistors below 10 rad(SiO/sub 2/)/s: implications for hardness assurance
  IEEE Transactions on Nuclear Science, 1994
• Trends in the total-dose response of modern bipolar transistors
  IEEE Transactions on Nuclear Science, 1992
• Comparison of enhanced device response and predicted X-ray dose enhancement effects on MOS oxides
  IEEE Transactions on Nuclear Science, 1988