125-Gb/s operation with 029-V·cm V_πL using silicon Mach-Zehnder modulator based-on forward-biased pin diode
- 24 January 2012
- journal article
- research article
- Published by Optica Publishing Group in Optics Express
- Vol. 20 (3) , 2911-2923
- https://doi.org/10.1364/oe.20.002911
Abstract
We present high-speed operation of pin-diode-based silicon Mach-Zehnder modulators that have side-wall gratings on both sides of the waveguide core. The use of pre-emphasis signals generated with a finite impulse response digital filter was examined in the frequency domain to show how the filter works for different filter parameter sets. In large signal modulation experiments, V pi L as low as 0.29 V.cm was obtained at 12.5 Gb/s using a fabricated modulator and the pre-emphasis technique. Operation of up to 25-Gb/s is possible using basically the same driving configurations. (C) 2012 Optical Society of AmericaThis publication has 23 references indexed in Scilit:
- 25Gb/s 1V-driving CMOS ring modulator with integrated thermal tuningOptics Express, 2011
- High speed silicon electro-optical modulators enhanced via slow light propagationOptics Express, 2011
- A high speed electro-optic phase shifter based on a polymer-infiltrated P-S-N diode capacitor.Optics Express, 2011
- Silicon optical modulatorsNature Photonics, 2010
- Demonstration of a low V_πL modulator with GHz bandwidth based on electro-optic polymer-clad silicon slot waveguidesOptics Express, 2010
- A 1 V Peak-to-Peak Driven 10-Gbps Slow-Light Silicon Mach–Zehnder Modulator Using Cascaded Ring ResonatorsApplied Physics Express, 2010
- Waveguide-integrated, ultralow-energy GeSi electro-absorption modulatorsNature Photonics, 2008
- 40 Gbit/s silicon optical modulator for high-speed applicationsElectronics Letters, 2007
- 125 Gbit/s carrier-injection-based silicon micro-ring silicon modulatorsOptics Express, 2007
- Electronic-photonic integrated circuits on the CMOS platformPublished by SPIE-Intl Soc Optical Eng ,2006