Graphitization and related variable-range-hopping conduction in ion-implanted diamond

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Abstract
Variable-range-hopping (VRH) conduction that has been ascribed to the formation of graphite sp2 bonds, can be generated in diamond by means of high dose ion implantation. With increasing implantation temperature, the ion doses required to generate this conduction increase owing to some form of self-annealing. Similar behaviour has been reported for the formation of amorphous material in silicon. Morehead and Crowder (1970 Radiat. Eff. 6 27) developed a model based on displacement spikes to describe this process in silicon. Prawer and Kalish (1995 Phys. Rev. B 51 15711) adapted this model to describe the onset of VRH conduction in diamonds that they had implanted with 100 keV C+ and 320 keV Xe+ at different temperatures. In this study it is assumed that the latter ions could not have formed displacement spikes in diamond. Equations, based on interstitial-vacancy generation and recombination, are then derived to describe the processes of damage formation and annealing in diamond during ion implantation, and applied to the data of Prawer and Kalish. The model fits the latter data well, and is also consistent with recent results on interstitial-vacancy generation, and the interactions of these defects, in electron-irradiated diamonds.

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