Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 48-49, 666-670
- https://doi.org/10.1016/0022-2313(91)90215-h
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPEJournal of the Electrochemical Society, 1990
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth, 1989