Computer-aided analysis of MOSFET-inverter circuits using normalized variables

1 December 1979

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits

Vol. 14 (6) , 1114-1118
https://doi.org/10.1109/jssc.1979.1051325

Abstract

A general approach to analysis and design of MOSFET-inverter circuits is presented. This approach includes the use of normalized variables in conjunction with an accurate MOSFET model in which important effects, such as body effect and channel shortening, are taken into account. Design curves of normalized delay parameters and power-delay product can be used as a design tool and as a means of comparing different static MOSFET-inverter types. The normalization procedure is independent of MOSFET device scaling rules.

Keywords

This publication has 2 references indexed in Scilit:

A d.c. model for an MOS-transistor in the saturation region
Solid-State Electronics, 1980
Design of ion-implanted MOSFET's with very small physical dimensions
IEEE Journal of Solid-State Circuits, 1974