A d.c. model for an MOS-transistor in the saturation region
- 1 July 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (7) , 765-772
- https://doi.org/10.1016/0038-1101(80)90135-5
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Computer-aided analysis of MOSFET-inverter circuits using normalized variablesIEEE Journal of Solid-State Circuits, 1979
- A simple two-dimensional model for IGFET operation in the saturation regionIEEE Transactions on Electron Devices, 1977
- A simple theory to predict the threshold voltage of short-channel IGFET'sSolid-State Electronics, 1974
- Bucket-brigade shift-register operation-exact correlation between experimental data and a computer modelIEEE Journal of Solid-State Circuits, 1973
- A Fundamental Comparison of Incomplete Charge Transfer in Charge Transfer DevicesBell System Technical Journal, 1973
- Steady State Mathematical Theory for the Insulated Gate Field Effect TransistorIBM Journal of Research and Development, 1973
- Performance limitations of the IGFET bucket-brigade shift registerIEEE Transactions on Electron Devices, 1972
- Current-voltage characteristics of small size MOS transistorsIEEE Transactions on Electron Devices, 1972
- IGFET Analysis through numerical solution of Poisson's equationIEEE Transactions on Electron Devices, 1968
- Carrier mobility and current saturation in the MOS transistorIEEE Transactions on Electron Devices, 1965