Temperature-dependent distributions of activation energies in amorphous semiconductors
- 1 November 1996
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 100 (7) , 471-475
- https://doi.org/10.1016/0038-1098(96)00441-3
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Steady-state optical modulation spectroscopy ofp-typea-Si:HPhysical Review B, 1994
- Limitations of the thermally stimulated conductivity as a technique for studying the density of states ofa-Si:HPhysical Review B, 1992
- An evaluation of phase-shift analysis of modulated photocurrentsPhilosophical Magazine Part B, 1990
- Post-transit time-of-flight currents as a probe of the density of states in hydrogenated amorphous siliconPhysical Review B, 1989
- Density of states and mobility—lifetime product in hydrogenated amorphous silicon, from thermostimulated conductivity and photoconductivity measurementsPhilosophical Magazine Part B, 1986
- Optical modulation spectroscopy of amorphous semiconductorsPhilosophical Magazine Part B, 1985
- Transient photoconductivity and photo-induced optical absorption in amorphous semiconductorsPhilosophical Magazine Part B, 1982
- Drift and diffusion in materials with trapsPhilosophical Magazine Part B, 1982
- Direct measurement of the gap states and band tail absorption by constant photocurrent method in amorphous siliconSolid State Communications, 1981
- An Analysis of the Dispersive Charge Transport in Vitreous 0.55 As2S3: 0.45 Sb2S3Physica Status Solidi (a), 1979