Optical modulation spectroscopy of amorphous semiconductors
- 27 September 1985
- journal article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 52 (3) , 313-324
- https://doi.org/10.1080/13642818508240603
Abstract
Basic characteristics of photomodulation spectroscopy are discussed. The method is applied to studying the band-tail states in a-Si:H and a-Ge:H, and the dangling-bond states in irradiated a-Si:H, trans-(CH)x, and chalcogenide glasses.Keywords
This publication has 38 references indexed in Scilit:
- A DLTS study of the effects of boron counterdoping on the gap states in n-type hydrogenated amorphous siliconSolid State Communications, 1984
- Soliton Energetics in Peierls-Hubbard ModelsPhysical Review Letters, 1984
- Exciton and Pair Recombination at Intimate Valence-Alternation Pairs in -Physical Review Letters, 1982
- Identification of the Dangling-Bond State within the Mobility Gap of-Si: H by Depletion-Width-Modulated ESR SpectroscopyPhysical Review Letters, 1982
- Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous SiliconPhysical Review Letters, 1981
- Photoinduced Defects in Chalcogenide GlassesPhysical Review Letters, 1980
- ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafersJournal of Applied Physics, 1979
- Optically Induced Localized Paramagnetic States in Chalcogenide GlassesPhysical Review Letters, 1975
- Model for the Electronic Structure of Amorphous SemiconductorsPhysical Review Letters, 1975
- Superconvergence and Sum Rules for the Optical ConstantsPhysical Review B, 1972