A DLTS study of the effects of boron counterdoping on the gap states in n-type hydrogenated amorphous silicon
- 30 June 1984
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 50 (11) , 991-994
- https://doi.org/10.1016/0038-1098(84)90272-2
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap statesPhysical Review B, 1982
- Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopyPhysical Review B, 1982
- Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopyPhysical Review B, 1982
- Observation of photoinduced changes in the bulk density of gap states in hydrogenated amorphous siliconApplied Physics Letters, 1982
- Identification of the Dangling-Bond State within the Mobility Gap of-Si: H by Depletion-Width-Modulated ESR SpectroscopyPhysical Review Letters, 1982
- Defect states in doped and compensated-Si: HPhysical Review B, 1981
- Optically induced conductivity changes in discharge-produced hydrogenated amorphous siliconJournal of Applied Physics, 1980
- Field effect and thermoelectric power on boron doped amorphous siliconJournal of Applied Physics, 1980
- Characterization of high gap state densitites in heavily hydrogenated a-SiJournal of Non-Crystalline Solids, 1980
- Substitutional doping of amorphous siliconSolid State Communications, 1975