Observation of photoinduced changes in the bulk density of gap states in hydrogenated amorphous silicon
- 15 March 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (6) , 474-476
- https://doi.org/10.1063/1.93139
Abstract
We have observed a reversible photoinduced modification of the bulk density of gap states in a-Si:H associated with the Staebler–Wronski effect. A detailed numerical analysis of diode admittance and deep level transient spectroscopy measurements shows that the changes in these properties after illumination can be explained by a lowering of the bulk Fermi level and an increase in the density of states below midgap.Keywords
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