Observation of electron and hole traps in hydrogenated amorphous silicon by voltage- and laser-excited deep level transient spectroscopy
- 30 November 1980
- journal article
- Published by Elsevier in Solar Cells
- Vol. 2 (3) , 331-347
- https://doi.org/10.1016/0379-6787(80)90036-8
Abstract
No abstract availableKeywords
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