Tunneling in Hydrogenated Amorphous Silicon
- 2 July 1979
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 43 (1) , 58-61
- https://doi.org/10.1103/physrevlett.43.58
Abstract
For the first time, structure has been found in the electron tunneling characteristics of a metal-oxide-semiconductor tunnel junction of an amorphous semiconductor. In the present study the amorphous semiconductor is phosphorus-doped hydrogenated amorphous silicon. The results have been analyzed to determine the surface density of states over part of the forbidden gap. The basic features of the density-of-states distribution are in agreement with the results of field-effect measurements reported for this material.Keywords
This publication has 11 references indexed in Scilit:
- Optical and photoconductive properties of discharge-produced amorphous siliconJournal of Applied Physics, 1977
- Amorphous silicon solar cellApplied Physics Letters, 1976
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976
- Electron tunneling into amorphous germaniumPhysical Review B, 1975
- Investigation of the localised state distribution in amorphous Si filmsJournal of Non-Crystalline Solids, 1972
- Interface states in MOS structures with 20–40 Å thick SiO2 films on nondegenerate SiSolid-State Electronics, 1972
- Theory of tunneling into interface statesSolid-State Electronics, 1970
- The Preparation and Properties of Amorphous SiliconJournal of the Electrochemical Society, 1969
- Tunneling in MIS structures—I: TheorySolid-State Electronics, 1967
- Tunneling from Metal to SemiconductorsPhysical Review B, 1965