Interface states in MOS structures with 20–40 Å thick SiO2 films on nondegenerate Si

This publication has 18 references indexed in Scilit:

• ENERGY DEPENDENCE OF ELECTRICAL PROPERTIES OF INTERFACE STATES IN Si–SiO2 INTERFACES
  Applied Physics Letters, 1970
• SURFACE STATES IN SILICON FROM CHARGES IN THE OXIDE COATING
  Applied Physics Letters, 1968
• Stabilization of MOS devices
  Solid-State Electronics, 1967
• The Si-SiO₂Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
  Bell System Technical Journal, 1967
• Evidence of the Surface Origin of the1fNoise
  Physical Review Letters, 1966
• Surface states at steam-grown silicon-silicon dioxide interfaces
  IEEE Transactions on Electron Devices, 1966
• DENSITY OF SiO2–Si INTERFACE STATES
  Applied Physics Letters, 1966
• Surface States and Barrier Height of Metal-Semiconductor Systems
  Journal of Applied Physics, 1965
• Impedance of semiconductor-insulator-metal capacitors
  Solid-State Electronics, 1964
• An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes
  Solid-State Electronics, 1962