Rapid determination of semiconductor doping profiles in MOS structures
- 31 January 1973
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (1) , 124-126
- https://doi.org/10.1016/0038-1101(73)90134-2
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Frequency Response of Gold Impurity Centers in the Depletion Layer of Reverse-Biased Silicon p+n JunctionsJournal of Applied Physics, 1972
- Silicon Impurity Distribution as Revealed by Pulsed MOS C-V MeasurementsJournal of the Electrochemical Society, 1971
- A NEW METHOD FOR DETERMINATION OF DEEP-LEVEL IMPURITY CENTERS IN SEMICONDUCTORSApplied Physics Letters, 1970
- A technique for directly plotting the inverse doping profile of semiconductor wafersIEEE Transactions on Electron Devices, 1969
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- Observation of Impurity Redistribution During Thermal Oxidation of Silicon Using the MOS StructureJournal of the Electrochemical Society, 1965