The annealing behavior of antimony implanted polycrystalline silicon
- 1 February 1982
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (3) , 228-230
- https://doi.org/10.1063/1.93055
Abstract
Dopant redistribution and sheet resistance of polycrystalline silicon films implanted with 100‐keV Sb+ ions to a dose of 1×1015 cm−2 or 3×1015 cm−2 have been investigated as a function of different annealing conditions. The correlation between Sb depth profiles, as measured by Rutherford backscattering, and sheet resistance provides considerable insight into the Sb doping behavior. In particular, low‐temperature (∼600 °C) short‐time (0.5 h) anneals resulted in good dopant activation without redistribution of the implanted Sb, whereas higher‐temperature anneals (≳900 °C) resulted in considerable redistribution. The sheet resistance of the films appeared to be controlled, to a large extent, by dopant segregation at grain boundaries and the fraction of the redistributed Sb within the grains.Keywords
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