Optical and electrical properties of heavily phosphorus-doped epitaxial silicon layers
- 1 February 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (3) , 760-763
- https://doi.org/10.1063/1.333109
Abstract
The index of refraction and the absorption coefficient of epitaxial Si films were measured as a function of wavelength (0.4–0.75 μm) and with phosphorus doping as parameter. These optical constants, obtained from reflectance and transmittance measurements of epitaxial Si films on sapphire substrates, were compared with literature values and with recent measurements of heavily P-doped poly-Si films. In heavily P-doped films (near the solid solubility) of poly and epi Si the absorption coefficients are about the same. Also, the Hall mobilities were measured as a function of carrier concentration in the range 6×1019–4×1020/cm3 and compared with the mobilities derived from infrared reflectance measurements on both poly and epi Si.This publication has 10 references indexed in Scilit:
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