Nonequilibrium segregation and trapping phenomena during ion-induced crystallization of amorphous Si
- 28 March 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 60 (13) , 1322-1325
- https://doi.org/10.1103/physrevlett.60.1322
Abstract
The segregation and trapping of Au at the moving crystal-amorphous Si interface has been measured. Epitaxial crystallization was induced by 2.5-MeV Ar-ion irradiation. The Au segregation is analogous to behavior at liquid-solid interfaces except that the interfacial segregation coefficient of 0.007 at 320 °C is independent of velocity between 0.6 and 6 Å/sec. The Au is trapped in crystalline Si at concentrations some 10 orders of magnitude in excess of equilibrium concentration.Keywords
This publication has 6 references indexed in Scilit:
- Ion-beam-induced epitaxy and interfacial segregation of Au in amorphous siliconApplied Physics Letters, 1987
- Zone refining and enhancement of solid phase epitaxial growth rates in Au-implanted amorphous SiApplied Physics Letters, 1986
- Proportionality between ion-beam-induced epitaxial regrowth in silicon and nuclear energy depositionPhysical Review B, 1985
- Models of impurity trapping during rapid solidificationMaterials Science and Engineering, 1984
- Solid Solubilities of Impurity Elements in Germanium and Silicon*Bell System Technical Journal, 1960
- Constitution of Binary AlloysJournal of the Electrochemical Society, 1958