Zone refining and enhancement of solid phase epitaxial growth rates in Au-implanted amorphous Si
- 13 January 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (2) , 118-120
- https://doi.org/10.1063/1.96970
Abstract
Epitaxial crystallization of Au-implanted amorphous Si layers has been studied over the temperature range 515–735 °C. During crystallization, Au is zone refined into the remaining amorphous layer, resulting in an Au concentration that increases as the layer becomes thinner. The rate of solid phase epitaxy increases rapidly with Au concentration over the range from 0.15 to approximately 0.50 at. %. At higher concentrations the rate enhancement diminishes and above 0.70 at. % severe retardation of epitaxy is observed to occur.Keywords
This publication has 8 references indexed in Scilit:
- Diffusion and precipitation in amorphous SiApplied Physics Letters, 1985
- Kinetics and Mechanisms of Solid Phase Epitaxy and Competitive Processes in SiliconMRS Proceedings, 1984
- Correlation among secondary ion mass spectrometry, cross-section transmission electron microscopy, and Rutherford backscattering analyses for defect density and depth distribution determinationApplied Physics Letters, 1983
- Epitaxial regrowth of intrinsic, 31P-doped and compensated (31P+11B-doped) amorphous SiJournal of Applied Physics, 1982
- Compensating impurity effect on epitaxial regrowth rate of amorphized SiApplied Physics Letters, 1982
- Influence of 16O, 12C, 14N, and noble gases on the crystallization of amorphous Si layersJournal of Applied Physics, 1977
- Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ionsJournal of Applied Physics, 1977
- Metal contact induced crystallization in films of amorphous silicon and germaniumJournal of Non-Crystalline Solids, 1972