Epitaxial regrowth of intrinsic, 31P-doped and compensated (31P+11B-doped) amorphous Si
- 1 June 1982
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (6) , 4399-4405
- https://doi.org/10.1063/1.331222
Abstract
The rate of solid‐phase epitaxial regrowth of implantation amorphized 〈100〉 Si was studied in intrinsic, phosphorus‐doped and compensated (boron‐ and phosphorus‐doped) materials. The anneals were performed in flowing Ar gas in the temperature range from 477 to 576 °C, and the regrowth was analyzed by 2.2‐MeV 4He+ channeling techniques. The intrinsic and compensated samples exhibited nearly equal growth rates with thermal‐activation energies of 2.85 eV (intrinsic) and 2.8 eV (compensated). The growth rate in the 31P‐doped (constant concentration of 1.7×1020 cm−3) was enhanced by a factor of 6 to 8, while little change in the activation energy was observed.This publication has 10 references indexed in Scilit:
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