Effect of Doping Profile Variation on GaAs Hybrid and Double-Read IMPATT Diode Performance at 60 and 94 GHz
- 1 October 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 32 (10) , 1342-1352
- https://doi.org/10.1109/tmtt.1984.1132846
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Effects of Doping Profile on GaAs, Double-Drift IMPATT Diodes at 33 and 44 GHz Using the Energy-Momentum Transport ModelIEEE Transactions on Microwave Theory and Techniques, 1984
- Comparison of theoretical and experimental results for millimeter-wave GaAs IMPATT'sIEEE Transactions on Electron Devices, 1984
- Simulation of GaAs IMPATT diodes including energy and velocity transport equationsIEEE Transactions on Electron Devices, 1983