Microstructural Control of Internal Electromigration Failure in Narrow Al-Cu-Si Lines
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- The mechanism of electromigration failure of narrow Al-2Cu-1Si thin-film interconnectsJournal of Applied Physics, 1993
- The influence of Cu precipitation on electromigration failure in Al-Cu-SiJournal of Applied Physics, 1992
- Grain boundary contributions to transportSurface Science, 1972